BUZ73A 01/10/2012 comset semiconductors 1/3 semiconductors n channel enhancement mode power mos transistors feature absolute maximum ratings symbol ratings value unit v ds drain-source voltage 200 v v sd drain-source diode voltage <1.7 v i ds continuous drain current t c = 37c 5.5 a i dm pulsed drain current t c = 25c 22 a v gs gate-source voltage 20 v r ds ( on ) drain-source on resistance 0.6 ? p t power dissipation at case temperature t c = 25c 40 watts t j operating temperature -55 to +150 c t st g storage temperature range -55 to +150 t l lead temperature 1.6 mm from case for 10 seconde 300 this is an n-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. this type can be operated directly from integrated circuits and housed in a to-220 envelo p e.
BUZ73A 01/10/2012 comset semiconductors 2/3 semiconductors thermal characteristics symbol ratings value unit r thjc thermal resistance, chip case <3.1 c/w r thja thermal resistance, chip to ambient <75 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v dss drain-source breakdown voltage i d =250 a, v gs =0 v 200 - - v v gs ( th ) gate-threshold voltage i d =1 ma, v gs = v ds 2.1 3 4 v i dss zero gate voltage drain current v ds =200 v, v gs =0 v t j =25 c - 0.1 1 a v ds =200 v, v gs =0 v t j =125 c - 1 100 i gss gate-source leakage current v gs =20 v, v ds =0 v - 10 100 na r ds ( on ) drain-source on resistance i d =4.5 a, v gs =10 v - 0.5 0.6 ? g fs transconductance v ds >2 * i d * r ds(on)max i d =4.5 a 3 4.2 - s c iss input capacitance v gs =0 v, v ds =25 v f= 1mhz - 400 530 pf c oss output capacitance - 85 130 c rss reverse transfer capacitance - 45 70 t d ( on ) turn-on delay time v dd =30 v, v gs =10 v i d =3 a r gs = 50 ? - 10 15 ns t r rise time - 40 60 t d ( off ) turn-off delay time - 55 75 t f fall time - 30 40
BUZ73A 01/10/2012 comset semiconductors 3/3 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : gate pin 2 : drain pin 3 : source
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